SiC MOSFET｜OS Electronics

Silicon Carbide (SiC) is a semiconducting material

composed of silicon (Si) and carbon (C) which has

the following features in comparison with

standard silicon:

SiC realizes high withstand voltage,

high heat resistance, small size, and high speed.

onsemi controls the supply chain of SiC device;

from SiC crystals, devices, packaging to

solution support.

onsemi is ready to support your power design for 

SiC diodes, SiC MOSFETs, and SiC modules

with wide bandgaps.

Silicon Carbide (SiC) Diodes

onsemi SiC Diodes adopts a completely

new technology which enables

superior switching performance and

higher reliability.

Silicon Carbide (SiC) MOSFETs

onsemi SiC MOSFETs are designed

to be fast and rugged. 

System benefits include high efficiency

to reduced system size and cost.

-M1 Family

 Voltage:1200V 1700V

Large die size >> low RTH.

Balance between switching loss and conduction loss is optimum.

Application: Motor Driver, Hard SW Applications

-M2 Family

Voltage today:650V,750V,1200V

Optimized for the lowest RDS(ON) for low speed applications.

Application: Motor Driver

-M3 Family

Optimized for fast switching applications. SW loss is the smallest.

Application: Hard SW Applications, LLC resonant

Rdson should be as small as possible

with VGS as small as possible

as gate loss is in proportion to the value of Vgs.

onsemi’s SiC MOSFET is the second smallest. 

onsemi is getting the golden mean for

switching losses at turn-on.

Rds(on) increases in proportion to Tj.

It is desirable to keep variation

as small as possible.

The variation in onsemi MOSFETs

are the second smallest.