Middle-Voltage MOSFET|OS Electronics

PRODUCTS

PRODUCTS

Product features

Product Overview

onsemi middle voltage MOSFET has variety of the process that optimizes each characteristic for the key parameters, on-resistance,
switching characteristics, and ringing surge caused by the recovery diode required for MOSFETs, and propose the most suitable
product for the application.

  • Wide voltage range  40V, 80V, 100V, 120V, 150V, 200V
  • Variety of Package line up
  • T10M 40V : HTGB 2000 Hr

 

 

Features

T6 Process(U-low on resistance)

T6 Process(U-low on resistance)


PTNG Process(Minimum ringing surge)

Ultra low on resistance(ex.:60V 0.7mΩ,
8x8mm 40V 0.13mΩ, 5x6mm)
・Improved power density
・Improved battery life

 

Good for Less power loss at always on ,
battery applications.

High speed switching
・Qg, Qoss improve
・Switching Loss improve


Good for high efficiency with high speed
switching, power supply application.

High speed recovery
・Small ringing
・Less surge during switching



Good for critical motor appli.
ringing surge at switching



■T10 process (Optimized for each application)

T10(T-X) : DCDC convertor

Feature :
・High efficiency ,Low capacity
・RDS-ON Qsw
・RDS-ON COSS
T10(T-M) : Motor cotl., Load switch

Feature :
・Low ON resistance
・Low Qrr(Body diode)
・Low EMI(Soft switching)

 

 

Automotive MOSFET Silicon technology roadmap


 

 

 

■Package line up

SO8FL 5x6

u8FL 3x3

PQFN 8x8

PQFN DC 8x8

TOLL

D2Pak7L

TO220

 

 

 

 

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